? 2014 ixys corporation, all rights reserved IXYP30N65C3 ixyh30n65c3 v ces = 650v i c110 = 30a v ce(sat) ??? ??? ??? ??? ??? ? ? ? ? ? 2.7v t fi(typ) = 24ns ds100539c(10/14) extreme light punch through igbt for 20-60khz switching features ? optimized for 20-60khz switching ? square rbsoa ? avalanche rated ? short circuit capability ? international standard packages advantages ? high power density ? extremely rugged ? low gate drive requirement applications ? power inverters ? ups ? motor drives ? smps ? pfc circuits ? battery chargers ? welding machines ? lamp ballasts ? high frequency power inverters symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 ? a, v ge = 0v 650 v v ge(th) i c = 250 ? a, v ce = v ge 3.5 6.0 v i ces v ce = v ces , v ge = 0v 15 ? a t j = 150 ? c 200 ? a i ges v ce = 0v, v ge = ? 20v ?????????????? 100 na v ce(sat) i c = 30a, v ge = 15v, note 1 2.35 2.70 v t j = 150 ? c 2.58 v symbol test conditions maximum ratings v ces t j = 25c to 175c 650 v v cgr t j = 25c to 175c, r ge = 1m ? 650 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 60 a i c110 t c = 110c 30 a i cm t c = 25c, 1ms 118 a i a t c = 25c 10 a e as t c = 25c 300 mj ssoa v ge = 15v, t vj = 150c, r g = 10 ? i cm = 60 a (rbsoa) clamped inductive load v ce ? v ces t sc v ge = 15v, v ce = 360v, t j = 150c 8 s (scsoa) r g = 82 ? , non repetitive p c t c = 25c 270 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in weight to-220 3 g to-247 6 g xpt tm 650v igbt genx3 tm g = gate c = collector e = emitter tab = collector to-247 g c e tab g c e to-220 tab
ixys reserves the right to change limits, test conditions, and dimensions. IXYP30N65C3 ixyh30n65c3 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 30a, v ce = 10v, note 1 11 19 s c ie s 1225 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 75 pf c res 28 pf q g(on) 44 nc q ge i c = 30a, v ge = 15v, v ce = 0.5 ? v ces 7 nc q gc 24 nc t d(on) 21 ns t ri 42 ns e on 1.00 mj t d(off) 75 ns t fi 24 ns e of f 0.27 mj t d(on) 19 ns t ri 40 ns e on 1.50 mj t d(off) 90 ns t fi 30 ns e off 0.41 mj r thjc 0.55 c/w r thcs to-220 0.50 c/w r thcs to-247 0.21 c/w inductive load, t j = 25c i c = 30a, v ge = 15v v ce = 400v, r g = 10 ? note 2 inductive load, t j = 150c i c = 30a, v ge = 15v v ce = 400v, r g = 10 ? note 2 e ?? p to-247 outline 1 2 3 terminals: 1 - gate 2 - collector 3 - emitter dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc pins: 1 - gate 2 - collector 3 - emitter to-220 outline
? 2014 ixys corporation, all rights reserved fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 00.511.522.533.544.5 v ce - volts i c - amperes v ge = 15v 13v 12v 10v 7v 9v 11v 8v fig. 2. extended output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 0 5 10 15 20 25 30 v ce - volts i c - amperes v ge = 15v 8v 9v 11v 13v 12v 14v 10v fig. 3. output characteristics @ t j = 150oc 0 10 20 30 40 50 60 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v ce - volts i c - amperes v ge = 15v 13v 12v 10v 9v 6v 11v 8v 7v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 30a i c = 15a i c =60a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1 2 3 4 5 6 7 8 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 60a t j = 25oc 30a 15a fig. 6. input admittance 0 10 20 30 40 50 60 567891011 v ge - volts i c - amperes t j = 150oc 25oc - 40oc IXYP30N65C3 ixyh30n65c3
ixys reserves the right to change limits, test conditions, and dimensions. IXYP30N65C3 ixyh30n65c3 fig. 11. maximum transient thermal impedance 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - oc / w fig. 7. transconductance 0 4 8 12 16 20 24 28 0 5 10 15 20 25 30 35 40 45 50 55 60 i c - amperes g f s - siemens t j = - 40oc 150oc 25oc v ce = 10v fig. 10. reverse-bias safe operating area 0 10 20 30 40 50 60 70 100 200 300 400 500 600 700 v ce - volts i c - amperes t j = 150oc r g = 10 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 45 q g - nanocoulombs v ge - volts v ce = 325v i c = 30a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mh z c ies c oes c res
? 2014 ixys corporation, all rights reserved fig. 12. inductive switching energy loss vs. gate resistance 0.0 0.4 0.8 1.2 1.6 2.0 2.4 10 20 30 40 50 60 70 80 r g - ohms e off - millijoules 0 2 4 6 8 10 12 e on - millijoules e off e on - - - - t j = 150oc , v ge = 15v v ce = 400v i c = 30a i c = 60a fig. 15. inductive turn-off switching times vs. gate resistance 20 30 40 50 60 70 80 10 20 30 40 50 60 70 80 r g - ohms t f i - nanoseconds 50 100 150 200 250 300 350 t d(off) - nanoseconds t f i t d(off) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 30a i c = 60a fig. 13. inductive switching energy loss vs. collector current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 15 20 25 30 35 40 45 50 55 60 i c - amperes e off - millijoules 0 1 2 3 4 5 6 e on - millijoules e off e on - - - - r g = 10 ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 0 1 2 3 4 5 6 7 e on - millijoules e off e on - - - - r g = 10 ? , v ge = 15v v ce = 400v i c = 30a i c = 60a fig. 16. inductiv e turn-off switching times v s. collector current 0 10 20 30 40 50 60 70 15 20 25 30 35 40 45 50 55 60 i c - amperes t f i - nanoseconds 20 40 60 80 100 120 140 160 t d(off) - nanoseconds t f i t d(off) - - - - r g = 10 ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 17. inductive turn-off switching times vs. junction temperature 0 10 20 30 40 50 60 70 80 25 50 75 100 125 150 t j - degrees centigrade t f i - nanosecond s 60 65 70 75 80 85 90 95 100 t d(off) - nanoseconds t f i t d(off) - - - - r g = 10 ? , v ge = 15v v ce = 400v i c = 60a i c = 30a IXYP30N65C3 ixyh30n65c3
ixys reserves the right to change limits, test conditions, and dimensions. IXYP30N65C3 ixyh30n65c3 ixys ref: ixy_30n65c3(4d-r47) 8-26-13 fig. 19. inductive turn-on switching times vs. collector current 0 20 40 60 80 100 120 15 20 25 30 35 40 45 50 55 60 i c - amperes t r i - nanosecond s 10 14 18 22 26 30 34 t d(on) - nanoseconds t r i t d(on) - - - - r g = 10 ? , v ge = 15v v ce = 400v t j = 25oc t j = 150oc fig. 20. inductiv e turn-on switching times vs. junction temperature 20 40 60 80 100 120 140 160 25 50 75 100 125 150 t j - degrees centigrade t r i - nanoseconds 16 18 20 22 24 26 28 30 t d(on) - nanoseconds t r i t d(on) - - - - r g = 10 ? , v ge = 15v v ce = 400v i c = 60a i c = 30a fig. 18. inductive turn-on switching times vs. gate resistance 0 40 80 120 160 200 240 280 10 20 30 40 50 60 70 80 r g - ohms t r i - nanosecond s 0 20 40 60 80 100 120 140 t d(on) - nanoseconds t r i t d(on) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 60a i c = 30a fig. 21. maximum peak load current vs. frequency 0 10 20 30 40 50 60 70 80 90 100 1 10 100 1,000 f max - kilohertzs i c - amperes t j = 150oc t c = 75oc v ce = 400v v ge = 15v r g = 10 ? d = 0.5 square wave triangular wave
|
